| 摘要 |
PURPOSE:To obtain a conducting film capacitor characterized by high permitivity and low leaking current, by using a sputtering apparatus having shutter mechanism covering an entire Si substrate, suppressing the growth of an oxide film on the surface of a substrate in the presputtering process, and forming a thin dielectric film. CONSTITUTION:Shutters 7 and 8 are closed and discharge is carried out between a target electrode 5 and a substrate electrode 10 in a chamber 4, which contains Ar gas atmosphere including 0-50% O2 at 10<-2>-10<-3>torr. Thus the surface of a target 6 is cleaned. The discharge is maintained, the shutter 7 is closed, and the shutter 8 is opened and closed. The time, when the surface of an Si substrate 9 is contacted with the atmosphere including plasma, is adjusted, and the thickness of a surface oxide film is controlled. Then, the shutter 7 is opened, and the thin film of Ta2O5 of the target if formed. The insulating layer, which is formed on an Si substrate, becomes laminated layers of a plasma oxide film, a mixed film of SiO2 and Ta2O5 and a uniform Ta2O5 film. When the thickness of the surface oxide film of the substrate is controlled at 20Angstrom or less, the composition of the interface between the insulating layer and the substrate can be controlled. Thus the high quality insulating layer is obtained, and the high quality capacitor is obtained.
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