| 摘要 |
The metal powder composition for the metallizing paste is composed of not less than 90 wt % gold, 0.03-3.0 wt % cadmium, 0.1-2.0 wt % bismuth, 0.01-1.0 wt % copper, 0.01-2.0 wt % germanium and 0.01-1.0 wt % silicon. The metallized paste bonds both the silicon carbide sintered substrate and the silicon semiconductor element with a high bonding strength. |
