| 摘要 |
PURPOSE:To obtain a semiconductor device, high-pressure diode, by a method wherein high-melting point brazing materials are bonded on the electrodes on both main surfaces of a semiconductor wafer using low-melting point brazing materials as bonding agents and after the wafer is formed into chips, the high-melting point and low-melting point brazing materials are fused and the lead members are connected to each chip. CONSTITUTION:Si diode wafers 11 are laminated 12 using Al layers 13 to form a laminated wafer 12 and Ni electrodes 14 are formed on both main surfaces of the laminated wafer 12 by an electroless plating method. After Sn layers 15 are adhered on the Ni electrodes 14 by a dipping method, solder foils 16 in the ratio of Pb:Sn=95:5 are superposed thereon and when the solder foils 16 are lightly pressed and are heated at 260-280 deg.C the Sn layers 15 are selectively fused and the solder foils 16 are bonded on the Ni electrodes 14. After the laminated water 12 is formed into chips 17, each chip is held between leads 18 using a jig 8 and when a treatment is performed on the chip at the melting point, 350 deg.C, or more of the solders 16, the Sn layers 15 and the solders 16 are fused and mixed into solders 19 and the lead wires are connected to the chip. An etching is performed on the surface of the chip 17, a protective material 20 is provided on the surface of the chip 17, the chip 17 is sealed with a resin sealing layer 21 and the high-presure diode is completed. |
