| 摘要 |
<p>A non-volatile random access memory (NVRAM) cell includes a volatile static type random access memory cell (1) consisting of a flop-flip circuit (Q1, Q2, Q3, Q4) having two nodes (N1, N2) on which a paired bit signal can be accessed, and a non-volatile electrically erasable programmable read-only memory (EEPROM) cell (20) consisting of a memory transistor (Q8) having a floating gate (FG), a capacitor circuit (CM2, TC3, C5) to which a voltage (VHH) called a writing voltage is applied, including a tunnel capacitor (TC3), and two transistors (Q7, Q11) for determining the polarity of a charge to be stored at the floating gate (FG) with a tunnel current in the tunnel capacitor (TC3) corresponding to the level of the bit signal existing at one of the two nodes (N2) in the flip-flop circuit (Q1, 02, 03, Q4). When the power supply voltage (Vcc) of the NVRAM cell is turned off, the EEPROM cell (20) stores the positive or negative charge at the floating gate (FG) corresponding to the bit signal level at the node (N2) in the flip-flop circuit holding the charge after the power supply (Vcc) voltage and the writing voltage (VHH) are turned off. When the power supply voltage (Vcc) is turned on, the EEPROM cell (20) recalls the state of the flip-flop circuit so as to be the same as before using the charge stored at the floating gate.</p> |
