| 摘要 |
PURPOSE:To facilitate a fine pattern wiring by a method wherein an additional positioning mark is formed in an insulation film simultaneously and alignment exposure of the electrode wiring of the next layer formed on the insulation film is performed by utilizing the new positioning mark. CONSTITUTION:When a photoresist film 6 is developed and a photoresist aperture 10 is formed, an additional positioning mark pattern 11 is formed simultaneously. After a layer insulation film aperture 12, which reaches the first electrode wiring 3, is formed in a resin film 5 and at the same time a new positioning mark 13 is formed by utilizing the photoresist 6 as a mask, the photoresist film 6 is removed. A metal film 14 is applied over the whole surface of a substrate and further a photoresist film 15 is applied. Then, when a laser beam 16 is applied to the mark 13 for positioning, only the laser beams 17 with a certain reflective angle among the beams of diffused reflection are detected by photodiodes 9 and the position where the intensity of the beams 17 becomes the maximum is detected as the position for alignment of a wafer and an exposure is performed. With this constitution, formation of a fine wiring is facilitated. |
