| 摘要 |
PURPOSE:To make a cell and a gate polycrystalline silicon film pattern minute and facilitate a long channel width in a limited area of silicon chip by a method wherein a continuous pattern part and a discrete pattern part are mutually connected through the first metal electrode film. CONSTITUTION:A long channel width can be obtained by composing a polycrystalline silicon film pattern 6 of a mesh type continuous part 6a and an island type discrete part 6b. In other words, a gate electrode has a configuration such that a plurality of continuous mesh type parts and a plurality of discrete parts surrounded by the mesh parts are provided and those parts are connected by the second Al electrode film 9b with an excellent conductivity. On the other hand, a source electrode has a configuration such that a P-type semiconductor layer 4 composing a channel region, a P<+> type semiconductor layer 3 contacted electrically with the layer 4 and an N<+> type semiconductor layer 8 composing a source region are exposed on the surface at the end parts 12a and 12b in the cell and connected to the first Al electrode film 9a. And these first and second Al electrode films 9a and 9b are alternately arranged in a comb shape. |
