| 摘要 |
PURPOSE:To reduce the contact resistance of an ohmic electrode by a method wherein an atomic plane doping and three-dimensional doping of an impurity are applied to the neighborhood of the contact boundary of the ohmic electrode. CONSTITUTION:A non-doped GaAs buffer layer 12, an Si-doped N-type GaAs channel layer 13, an Si plane atomic doping layer 14 and an Si-doped N<+> type GaAs contact layer 15 are successively formed on a semi-insulating GaAs substrate 11. Then a selective etching is performed in such a manner than the N<+> type GaAs contact layer 15 and the Si atomic plane doping layer 14 are removed and the N-type GaAs channel layer 13 is etched to the predetermined thickness. Source and drain electrodes 16 which have the ohmic contacts with the N<+> type GaAs contact layer 15 are deposited and alloy regions 16A are formed by mutual diffusion. A gate electrode 17 is formed on the N-type GaAs channel layer 13 exposed by the etching and made of, for instance, aluminum. |
