| 摘要 |
PURPOSE:To obtain a magnetoresistance element which has a small saturation magnetic field even if the stripe of a ferromagnetic resistor is narrow and has a high magnetic sensitivity in a low magnetic field by providing ferromagnetic layers with a thickness more than 1.5 times of the thickness of the magnetic resistor on both sides of the magnetic resistor. CONSTITUTION:Ni-Fe, a magnetoresistance material, is evaporated on a glass substrate 11. A stripe shape magnetic resistor 12 with a stripe width W is left on the substrate 11 by etching the evaporated film. Then ferromagnetic layers 16, which are extended to nearly the same length as the length of the resistor 12 and along the resistor 12, are formed. If the thickness of the ferromagnetic layer 16 is selected to be more than 1.5 times of the thickness of the magnetic resistor 12, reduction effect of a saturation electric field appears noticeably and a magnetic sensitivity of the magnetic resistance element can be improved significantly. After the ferromagnetic layers 16 are formed, Al electrodes 13a and 13b are formed. Then SiO2 is applied over the whole surface of the substrate 11 by a sputtering method to form a protection film 14. The protection film 14 on the electrodes 13a and 13b is removed by etching to form electrode lead-out parts 15a and 15b. |
