| 摘要 |
PURPOSE:To improve reliability and integration degree by a method wherein an insulation film is formed on a part where a field region is etched by a coating method. CONSTITUTION:After an oxide film 2 is formed on a substrate 1, photoresist is applied and the photoresist film 4 is left only on a region where elements are to be formed. Then, utilizing the film 4 as a mask, the oxide film 2 and the substrate 1 are etched to the predetermined depth. After the film 4 is removed, the surface is coated with an impurity diffusion source solution containing boron for prevention of a field inversion to form a thin impurity diffusion source film 3. Then an insulation film forming solution is applied thick so as to cover over the whole surface of the substrate 1 and baked to form a smooth insulation film 5 and then the insulation film 5 and the oxide film 2 are etched as far as the region where the elements are to be formed is exposed. With this constitution, leakage defects can be reduced. |
