| 摘要 |
Each IDT (inter-digital transducer) (22, 24) of a SAW (surface acoustic wave) device (20) is formed on a thin resistive doped silicon film having the same pattern as the IDT, which improves adhesion of the IDT to the substrate. The silicon film also constitutes electro-acoustic absorbers (26, 28) between the IDTs and edges (40, 42) of the substrate, and can have a linearly tapered edge adjacent to each IDT to suppress reflections at the absorber boundary. The SAW device is formed by sputtering silicon onto the substrate, subsequently forming the IDTs, and then etching the silicon from areas where it is not wanted.
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