发明名称 CONTACT TYPE IMAGE SENSOR
摘要 PURPOSE:To improve resolution by providing a transparent protector of layer or plate form, providing a slit part between neighboring photodetecting elements and light-transmitting windows in the direction of thickness from the element- side, and thereby cutting off reflecting light. CONSTITUTION:A transparent electrode 12 is formed by patterning by means of etching after forming a film by means of electronic-beam vapor-depositing or spattering at a temperature <=300 deg.C at which such as ITO, SnO2, etc. of an amorphous this film semiconductor does not deteriorate. In order to separate a couple of light-transmitting parts 10 and photodetecting elements 13 from unnecessary reflecting light from a reader part, the transparent protector 15 that has the slit 14 is provided with an intermediation by a transparent adhering layer 16 in a manner that the slit 14 is located at a boundary of the photodetecting elements. For the material of the protector 15, a thin bro-silicated glass, light-transmitting seramics which are non-organic materials, or polymeric materials such as transparent epoxy resin, transparent silicon resin etc. can be used.
申请公布号 JPS61248655(A) 申请公布日期 1986.11.05
申请号 JP19850090044 申请日期 1985.04.26
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 ONO MASAHARU;KITAGAWA MASATOSHI
分类号 H04N1/028 主分类号 H04N1/028
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