发明名称 MANUFACTURE OF PHOTOCONDUCTIVE THIN FILM
摘要 <p>PURPOSE:To shorten the optical response time of a light current, by exposing a thin film, whose main component i CdS, CdSe or solid solution of CdS-CdSe to the vapor of InCl3 in the hated state. CONSTITUTION:InCl3 5 is placed on the central bottom part of an alumina-boat main body 1. A glass substrate 3, on which a thin film 4 comprising CdS, CdSe or CdS-CdSe is provided, is placed so as to face upward. A boat cap 2 is mounted. Then the boat is heated. When CdS, CdSe or mixed powder of them 6 is placed in crystal growing, the same result is obtained. It is desirable that the thickness of the film 4 is 2,000-10,000Angstrom and the heating temperature is set at 450-600 deg.C in this case. In this activation by the vapor of InCl3, the vapor pressure of Cl is lower than that of CdCl2. Therefore, the amount of associated Cl is less and yielded sensitizing centers and various traps become few. As a result, the optical response time is shortened.</p>
申请公布号 JPS61248572(A) 申请公布日期 1986.11.05
申请号 JP19850090032 申请日期 1985.04.26
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 WADA HIROKO;IKEDA KOSUKE;YOSHIGAMI NOBORU
分类号 H01L31/0248;H01L31/18 主分类号 H01L31/0248
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