| 摘要 |
PURPOSE:To prevent an N-type polycrystalline silicon layer from reaction with aluminum and recrystallization in a heat treatment and avoid the increase of a contact resistance caused by the recrystallization by a method wherein the conductor layer of the part of the second conductor layer which is not used as a high resistance material is formed with a double-layer structure consisting of a layer of silicide of refractory metal and an N-type polycrystalline silicon layer. CONSTITUTION:The first conductor layer 102 is provided on one main surface of a P-type semiconductor substrate 101 as a gate electrode of a MOS transistor. An N-type semiconductor layer 103 for source/drain is provided in self-alignment with the first conductor layer 102 and the second conductor layer is formed. The one part of the second conductor layer is used as a high resistance material 104 and the other part has a double-layer structure consisting of an N-type polycrystalline silicon layer 105 or 106 and a layer 110 of silicide of refractory metal. By providing the layer 110 of the silicide of refractory metal between the N-type polycrystalline silicon layer 106 and an aluminum wiring 108, the recrystallization of the N-type polycrystalline silicon layer 106 is avoided and hence the increase of a contact resistance, caused by filling the contact hole with recrystallized silicon particles, is not created.
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