| 摘要 |
<p>A photoelectric converting device comprises a plurality of photoelectric converting cells.</p><p>Each of the cells has a semiconductor transistor consisting of two main electrode regions formed of a semiconductor of one conductivity type and a control electrode region formed of a semiconductor of the opposite conductivity type and a capacitor for controlling a potential of the control electrode region in the floating state.</p><p>Each of the photoelectric converting cells accumulates carriers generated due to an incident light into the control electrode region and controls an output by an accumulated voltage generated due to the accumulated carriers by controlling the potential of the control electrode region in the floating state through the capacitor.</p><p>Each of the photoelectric converting cells consists of a first portion having a high photoelectric converting efficiency and a second portion which is formed with at least an electrode of the capacitor and an electrode of the other main electrode regions, and a width of the first portion is formed narrower than a width of the second portion and the first portion is arranged in a line.</p> |
