| 摘要 |
PURPOSE:To lower the influence on control of composition even if precipitation occurs on the tube wall by setting a crystal growth temperature to such a temperature where the reaction for precipitating a compound is carried out at the reaction rate which controls the reaction rate itself. CONSTITUTION:On the occasion of vapor growth of multielement compound semiconductor consisting of three or more elements by the halogen transfer method, for crystal growth is realized by setting the crystal growth temperature to a value so that the reaction for precipitating such compound is carried out at the reaction rate which controls itself. For example, in case of causing InGaP to grow on a GaAs substrate 8, the raw material gas flow rate is set to the condition for growth of In0.49Ga0.51P and it is searched how depending on the growth temperature the InGaP growth rate. The curve of the given figure indicates the result of such investigation and the growth rate becomes maximum at a temperature about 740 deg.C. Next, a good crystal having no change of composition can be obtained through the growth at a temperature of 660 deg.C in the reaction rate control region (b). |
