| 摘要 |
PURPOSE:To permit control of compsn. of a single crystal semiconductor and the amt. of doping by injecting molten material of the semiconductor into a semiconductor in liquid phase. CONSTITUTION:A semiconductor material 22 of high purity is sealed in a quartz tube 21, which is melted by a heating device 23 and then quenched obtaining polycrystal 24. Then, the polycrystal 24 is housed in a cylinder 14a of an injecting device 14. After housing a semiconductor material in a boat 11, an opening part 14b at the top of said injecting device 14 is inserted into the semiconductor material, which is inserted into a furnace body to melt the semiconductor material 13 and the polycrystal 24 forming liquid phase semiconductor 13 and liquid semiconductor 15. The boat 11 is slid slowly to cause growth of the semiconductor single crystal 12, pushing a piston 14c simultaneously in the arrow mark A direction, and the liquid semiconductor 15 is diffused into the liquid phase semiconductor 13 from an opening part 14b.
|
