| 摘要 |
PURPOSE:To enable an epitaxial layer to be selectively formed only on the cut surface, by inserting a bar-form wafer into a ditch to prevent the crystal growth on the surfaces except the cut end and allowing the crystal to be grown on the exposed part of the wafer on the upper surface of a susceptor. CONSTITUTION:A bar-form wafer 6 is inserted into a heating susceptor 8 in which there are formed stripe-formed ditches 9 in rectangular section having the same depth with the width of the bar-form wafer 6 and the same width with the thickness of the bar-form wafer 6. After the bar-form wafer 6 is set to the susceptor 8 having these stripe-form ditches 9, an epitaxial layer 10 grown only on an end shown in an enlarged sectional view of the bar-form wafer can be obtained using the MO-CVD method. In this case, in order to prevent any crystal growth on the surfaces except the cut end which may be caused by creeping a material gas in the ditch 9, the dimensions of the width and the depth of each ditch are made to be the dimensions of the bar-form wafer 6. |
