| 摘要 |
PURPOSE:To allow a high-output operation by continuous oscillation at room temperature and to improve the yield ratio with favorable controllability of the production condition, by making the nearby section of the end surface of a semiconductor laser a window region where no light-absorption is present. CONSTITUTION:A main stripe-shaped groove 21 near the interface of the current blocking layer 11 on a substrate 10 is a V-shaped channel groove for current conduction, the sub-stripe-shaped grooves 22 and 23 consist of a pair of right and left grooves 22a-22d where the distance of the window regions 1a and 1b is narrow and a pair of right and left grooves 23a and 23b where the distance of the excitation region 2 is wide. An active layer for laser oscillation 13 to be laminated on a clad layer 12 is curved directly over the groove 22 and 23 influenced by the clad layer 12 as a ground coat, and other part is formed flatly. A clad layer 14 for the double hetero junction is formed on the active layer 13, and a cap layer 15 for obtaining the ohmic contact is further laminated on the layer 13. The laser ray oscillating in the excitation region 2 becomes the window laser without being absorbed in the window regions 1a, and 1b, thereby allowing the high-output operation.
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