| 摘要 |
PURPOSE:To obtain a highly reliable laser with high-speed response by a method wherein double grooves that reach to an active layer are formed on the outside of the double channels so as to reduce the high-frequency current flowing in unnecessary part. CONSTITUTION:After a DC-PBH LD structure multi-layer wafer has been produced in a conventional method, 2 grooves 60 and 61 are etched with selective etching liquid of H2SO4 system and HC system from the surface so that the grooves stop at the upper part of an active layer 3. Then, when the etching is performed with a solution of H2SO4:H2O2:H2O=3:1:1, the active layer 3 is etched not only to the bottom section of the grooves 60 and 61 but also to the inside of the channels 51 and 52. Then, an SiO2 film is laminated on the whole surface with thickness of 3,000Angstrom , and an SiO2 film is also laminated in the gaps 70, 71, 72, and 73. The SiO2 film on the stripe region 80 is removed to form a Cr/Au film on the whole surface as a p-side electrode 21, and an n-side electrode 22 is formed with Au-Ge-Ni. The capacity at the gaps 70 and 72 is small so that the high-frequency current is restricted to flow in the channel sections 51 and 52, thereby improving the high-speed response characteristics.
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