| 摘要 |
PURPOSE:To shorten a process time and to prevent a defect from occurring in an Si substrate by varying the type and the reaction temperature of reaction gas in an apparatus by a vapor phase growing method to continuously form a pad oxide film and a silicon nitride film. CONSTITUTION:A pad oxide film 2 is formed by a vapor phase growing method on a P-type Si substrate 1. In this case, reaction gas includes dichlorosilane and nitrogen oxide, and reaction temperature is 850 deg.C, and reaction pressure is 1.1mbar. Then, reaction gas is interrupted, the temperature is fallen to 760 deg.C, and a silicon nitride film 3 is grown under the following conditions. The reaction gas includes dichlorosilane and ammonia, reaction pressure is 0.8mbar. Then, a silicon nitride film 3a to become a mask at locos oxiding time remains by a photolithography, and a field film 4 is formed by locos oxidation. Then, a N-channel MOS transistor is formed by a conventional method. |
