| 摘要 |
PURPOSE:To enable to perform simply and in a short time blank heating of a reaction tube by providing a vertically movable carbon ring to the external periphery of a reaction tube for the crystal growth and permitting heating of the ring by high frequency. CONSTITUTION:A carbon ring 7 is provided to the external periphery of a reaction tube 8 for crystal growth. Reaction gas is introduced into the reaction tube 8 through a pipe 1, and a semiconductor is grown on a semiconductor substrate 6 on a carbon susceptor 5 heated by a high frequency coil 3. After the growth is completed, the substrate 6 is taken out and the cooling water 4 is drained off, and the carbon ring 7 is moved vertically with a quartz rod 9. The high frequency coil 3 is moved vertically at the same time, and the reaction tube 8 is heated by elevating the temp. of the carbon ring 7 by the high frequency heating. At the same time, etching gas is introduced through a pipe 2 and reaction products deposited on the inside wall of the reaction tube 8 are removed.
|
