| 摘要 |
PURPOSE:To obtain an MESFET in which source and drain electrodes are approached to a gate electrode as near as possible by forming an operating layer on the surface of a semiconductor substrate, then selectively ion implanting to reduce a source resistance, and forming a recess of an active layer and electrodes for the implanted layer in a self-aligning manner. CONSTITUTION:An N-type conductive type epitaxial layer 13 and a mask 14 are formed on a high resistance buffer layer 12 on a semi-insulating substrate 11. A light implanted layer 15 is formed by ion implanting, an ohmic metal 16 is formed by sputtering, and source and drain electrodes 17, 18 are formed by etching back the entire surface. With the electrodes as masks the layer 13 is etched through a hole 19, and a recess 20 is formed to form the operating layer of an MESFET in a suitable thickness. Further, with the electrodes 17, 18 as masks a gate metal is deposited, and a gate electrode 21 is formed in the recess 20. In this case, a gate metal 21' to be deposited on the electrodes 17, 18 gradually reduces the hole 19 by a tangential law. Thus, the shape of the electrode 21 is gradually narrowed toward an upward direction to form the shape for hardly shortcircuiting the electrodes 17, 18.
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