发明名称 PREPARATION OF SUBSTRATE
摘要 PURPOSE:To obtain cubic boron nitride film having superior flattness of the surface by forming a thin film of cubic BN or consisting essentially of cubic BN on a first substrate, forming then a bonding layer on said thin film and bonding a second substrate on said bonding layer, then removing the first substrate. CONSTITUTION:Thin film (2) consisting of cubic BN or consisting essentially of cubic BN is formed on a first substrate (1) comprising silicon, molybdenum, sapphire, or quartz glass, etc. Then, a bonding layer 3 combining metallic films such as Ti, Pt, Au, etc., is formed on the thin film (2). Further, the second substrate 4 is bonded to the bonding layer 3 and the substrate 1 is removed finally by polishing or dissolution, etc.
申请公布号 JPS61247699(A) 申请公布日期 1986.11.04
申请号 JP19850085837 申请日期 1985.04.22
申请人 NEC CORP 发明人 FUJII KAZUTAKA;SHOHATA NOBUAKI
分类号 C30B29/38;H01L21/02 主分类号 C30B29/38
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