| 摘要 |
PURPOSE:To enhance insulations among signal electrodes of a source, a drain and a gate and to increase the reliability by reducing in thickness an insulating film formed on the gate electrode of a transistor channel forming region as compared with an insulating film formed on the gate electrode except the channel forming region. CONSTITUTION:The first gate insulating film 3 of Si3N4, or SiO2 is formed on the gate electrode 2 on a substrate 1, and a part on the electrode 2 is etched. Then, the second gate insulating film 4 of similar material, and a semiconductor film 5 of an amorphous silicon are continuously formed, and only the film 5 is etched in the prescribed pattern to form a source electrode 6 and a drain electrode 7 which is used also for a picture element. When a voltage is applied to the electrode 2, an electric field is applied through the film 4 to the film 5, and a current is flowed between the electrode 6 and the electrode 7. Thus, when the film 4 is reduced in thickness, the characteristics are improved. A thick insulating layer 3 formed as thick as possible is inserted to the superposing part of the electrodes 2 and 6 or 7 to prevent a leakage. |
