| 摘要 |
PURPOSE:To enable to prevent a thin film from varying in volume and from cracking by heating a thin film formed by photovoltaic chemical reaction in inert gas atmosphere of oxygen without exposing to the atmosphere and substituting an element as a sensitizer of chlorine remaining in the film for the oxygen. CONSTITUTION:A sample 51 of single crystal Si wafer is secured onto a boat 52, and disposed on a sample base 14 in the first vessel 11. Tetramethylsilane, chlorine and oxygen mixture gas is fed to the vessel 11, and the pressure is held at prescribed value. Then, when a light source 17 is fired to emit ultraviolet rays, a thin film is accumulated and formed. Then, the third vessel 31 is evacuated in advance in vacuum, and the boat 52 is conveyed into the vessel 31. Thereafter, nitrogen gas is fed into the vessel 31 to be atmospheric pressure. Then, the boat 52 is conveyed into the vessel 21. The vessel 21 is preheated, and nitrogen gas is flowed. Subsequently, oxygen gas is flowed to the vessel 21 and annealed. |
