| 摘要 |
PURPOSE:To prevent in the formation of multilayer wirings from shortcircuiting or disconnecting by allowing a resist pattern having a tapered side through step of anisotropically etching the entire resist to remain, anisotropically etching the metal film therewith to form a wiring conductor, thereby forming a stable insulating film without improper coverage. CONSTITUTION:A prescribed element is formed, an aluminum film 2 is formed on the entire surface by depositing on a semiconductor substrate 1 coated with an insulating film, a resist pattern 3a and then a resist film 3b are formed. A smooth crest shape 3c is formed on the pattern 3a. When the resist film is entirely anisotropically etched, the only film 3 of the crest 3c part remains in a crest shape on the film 2. With the film 3 as a mask the film 2 is anisotropically dry etched to form a wiring conductor part 4. Then, the film 3 is etched, and the area is gradually contracted, thereby forming the conductor 4 in a semicircular sectional shape. When an insulating film 5 is accumulated by a vapor phase growing method on the conductor part 4, the sectional shape as shown is obtained. |
