| 摘要 |
PURPOSE:To make it possible to form a CVD film in succession without growth of the CVD film on the synthetic quartz, and improve mass-productivity of the device, by installing in a reaction chamber a slit passing the light of the UV lamp through the condenser lens, and connecting the gas-introducing pipe flowing the inactive gas in the space between the slit and the synthetic quartz. CONSTITUTION:When the UV lamp 5 radiates the light with a specified wavelength, it is converged between the synthetic quartz 6 and the wafer 2 by the condenser lens 9, and irradiates the wafer 2 through the slit 10 without any obstacles. By introducing the inactive gas through the gas-introducing pipe 11, the space S between the synthetic quartz 6 and the slit 10 is filled with the inactive gas, and the inactive gas flows into the reaction chamber 7 through the hole of the slit 10. Thus, the reactive gas for film forming can not reach the synthetic quartz 6 through the slit 10, so that the film forming is not performed on the synthetic quartz 6. Accordingly, the film forming on the wafer is performed stably and successively. |
