| 摘要 |
PURPOSE:To reduce the dislocation within the operating layer that is introduced in the production process by a method wherein required p-, n-regions and electrodes are formed on an operating layer of a semiconductor substrate, then the surface of the operating layer is adhered on an insulative substrate so as to make the semiconductor crystalline section thinner by removing only the semiconductor substrate with the selective etching liquid. CONSTITUTION:An In0.53Ga0.47As operating layer 2 is formed on an InP substrate 1 by molecular ray epitaxial method to 0.15mum, a drain 3 as a FET, source 4 and gate electrodes 5 are formed, and a gold wire 6 is wire-bonded. The side where the InP/InGaAs electrode is located is adhered on the insulative glass substrate 7 with adhesive of epoxy resin system. Then, the substrate is etched with hydrochloric acid to selectively remove only the InP substrate 1 (the hydrochloric acid hardly etches the actuating layer of the InGaAS). The dislocation density in the In0.53Ga0.47As operating layer of the obtained InGaAs system semiconductor device is approx. 100 pieces/cm<2>, being substantially reduced in comparison with the approx. 10,000 pieces/cm<2> before the removal of the substrate.
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