| 摘要 |
PURPOSE:To pulverize the crystal grains of a vapor deposited metallic film and to make irregular the orientation thereof by floating electrically an object to be treated and bringing the same into contact with plasma. CONSTITUTION:A metallic target 2 is used as a cathode and plasma 8 is generated by an electric discharge and magnetic field so that the metal of the target 2 is deposited on the object 5. The object 5 is electrically floated and is positioned to contact with the plasma 8 in such magnetron sputtering method. the crystal grains are made finer than heretofore and the Al film in which the crystal grains are irregularly oriented is obtd. when Al or the like is sputtered by the above-mentioned method. The wirings formed of such Al film are lower in the individual height than heretofore althrough many pits are generated and therefore the deterioration of the characteristics of the insulating film to be formed thereon is mitigated.
|
