| 摘要 |
PURPOSE:To prevent the roughening of an etching surface and the deterioration of the etching shape during etching by disposing a material to be etched on an electrode in tight contact therewith and coating the surface to be subjected to ion bombardment with AlN. CONSTITUTION:A target coating member 2 consisting of AlN ceramics is dis posed on the target electrode 1 in a vacuum chamber 7 and a counter plate 6 consisting of AlN ceramics is disposed to the upper position thereof where said plate faces said member in a reactive sputter etching device of a parallel flat plate type. An etching sample3 having a single crystal or polycrystalline Si is disposed on the member 2 in tight contact therewith. SiCl4 which is the gaseous material to be introduced for etching is then introduced into the vessel through a gas blow off pipe 4; at the same time, a high-frequency electric field is impressed thereto from a high-frequency power source 5 to generate the plasma, by which Si is etched. The satisfactory etching is executed without the releasing of moisture and O during the plasma discharge by the above- mentioned method.
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