SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE:To form a delay element having a comparatively large delay time with a small number of circuit elements by using the resistance and the gate capacity of an MOS field effect transistor FET set previously into a basic cell to constitute a delay element. CONSTITUTION:A basic cell 1A contains an inverter INV1 using MOSFETs M1-M4; while a basic cell 1B contains an inverter INV2 using MOSFETs M1-M6. The gate capacities of MOSFETs M2-M6 within the cell 1A are connected in parallel with each other for production of a large capacity Ct. Then a CR type charging/discharging circuit is formed with the capacity Ct and resistances R1 and R2 in both cells 1A and 1B respectively. This charging/ discharging circuit is provided to a signal transmission path between both inverters INV1 and INV2 for formation of a delay element.