| 摘要 |
PURPOSE:To allow growth of SiO2 or PSG film with good coverage on the stepped portion through reaction of SiH4 and NO or SiH4, NO and PH3. CONSTITUTION:AnSi wafer 2 is perpendicularly provided within a reaction tube 1 of pressure reduced CVD apparatus being kept at 400-900 deg.C and SiH4 and NO or SiH4, NO and PH3 are reacted. Thereby, an SiO2 film or PSG film can be obtained and SiO2 or PSG which assures good coverage on the stepped portion and also assures equal film thickness in the wafer or between wafers and concentration of phosphorus can be obtained. Particularly, a PSG film including phosphorus of 0-20wt% can be obtained by changing a flow ratio of PH3 and SiH4. Disconnection at the stepped portion can be prevented by providing a PSG including phosphorus P of 6wt% or more on a poly-Si wiring, reflowing it and flattening the stepped portion of wiring. |
