| 摘要 |
PURPOSE:To enable high-output operation by forming sub-striped grooves while being adjoined on both sides of a main striped groove shaped to an active layer, curving and growing active layers in the grooves and thinly shaping an active layer on the main striped groove. CONSTITUTION:Striped grooves 22', 23' having a shape the same as or slightly larger than a main striped groove shaped in a post-process are formed to the growth surface of a P-type GaAs substrate 10, and an N-type GaAs current stopping layer 11 is grown on the substrate 10 so that a growth surface is flattened through a liquid-phase epitaxial growth method. A resist film 30 is formed onto the layer 11, and sub-striped grooves 22, 23 in a shape that they are overlapped to the mesa type striped grooves 22', 23' and a main striped groove 21 at the center of the grooves 22, 23 are shaped. The layer 30 is removed, and a P-GaAlAs clad layer 12, a GaAlAs active layer 13, an N-GaAlAs clad layer 14 and an N<+>-GaAs cap layer 15 are formed. The active layer 13 is curved in the sections of the grooves 22, 23, and the active layer 13 is thinned just above the main striped groove 21, thus acquiring a high output.
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