| 摘要 |
PURPOSE:To obtain a Supermalloy film with an excellent dimensional accuracy by applying a positive type photoresist to a substrate, covering the film by a mask with a window for forming the Supermalloy, and performing an exposure to light in two directions, where incident angles are specified. CONSTITUTION:A positive type photoresist 2 is applied to a substrate 1 and is provided a mask 3 with an opening opposite to a Supermalloy 5 to be provided on the substrate 1. Light 4 is irradiated on the resist 2 exposed in the opening as follows: The light 4 is irradiated in two directions and incident angles with respect to the substrate 1 are prescribed to be 30 deg.-80 deg. and, after the portion exposed to light is removed by development, the overhanging resist 2 being left on the substrate 1, a post baking is applied to the resist 2. Then, the Supermalloy film 5 is coated over the whole surface so as to cut off the portion of the film 5 in the opening and the resist 2 around the opening is removed together with the film 5 coated thereon. Thus, without producing a fin, a pattern with an excellent dimensional accuracy is obtained. |
