| 摘要 |
PURPOSE:To measure characteristic of elements formed on a substrate by forming divided electrodes and assembling them in connection with each electrode after the end of test of each semiconductor element. CONSTITUTION:The p-base 2, p<-> anode layer 3, n-emitter 4 and n-cathode 5 are formed on an n-type Si substrate 1. An aperture is formed selectively to an insulation film 6, electrodes 7, 8, 10 are formed, electrodes 8 and 10 are separated at the discontinuous part 19, and an electrode 9 is attached to the lower surface of substrate. Since electrodes are respectively isolated, various characteristics of transistor and diode can be individually measured by a probe test. The defective wirings are eliminated and a wire 17 is thermally bonded, burying the discontinuous portion 19. Thus, a semiconductor can be manufactured by sealing with resin. |
