| 摘要 |
PURPOSE:To convert absorbed light wave energy into electrical energy efficiency by a method wherein independent fine particles with a typical diameter smaller than a light wavelength are substantially buried in a semiconductor which creates a Schottky barrier with those particles and a particle-semiconductor junction is formed. CONSTITUTION:Metal fine particles 1 are buried in a semiconductor 2 independently one by one so as to form Schottky barrier junctions and these metal fine particles 1 are connected to an anode 3. An insulation layer 4 is inserted between the anode 3 and the semiconductor 2. A transparent cathode 5 is provided on the side opposite to the anode 3 and covered with a reflection preventing film 6. If a light beam is applied from the side of the reflection preventing film 6, free electrons in the metal fine particle 1 absorb the light energy in the form of dipole transition and the absorbed energy is transferred to the electronic excitation state and the electrons with the energy higher than the Schottky barrier level flow into the side of the semiconductor 2. An electromotive force is generated between the metal fine particle 1 and the semiconductor 2 and taken out as a current to the external system by the electrode 5. With this constitution, a photoelectromotive force can be obtained with a high efficiency. |
