| 摘要 |
PURPOSE:To improve photoelectric conversion characteristics and increase a sensitivity in a short wavelength region by a method wherein an a-Si layer, which contains oxygen and nitrogen atoms, is made to be photoconductive in the region where an optical band gap is 2.0eV or higher. CONSTITUTION:An a-Si layer 103 of a photoelectric conversion element 100 consists of an a-Si basic body which contains at least one kind of hydrogen atoms, halogen atoms and deuterium atoms and further contains oxygen atoms and nitrogen atoms. This a-Si layer 103 is produced by a glow discharge decomposition of mixture gas of hydride, deuteride or halogenide of silicon and carbon dioxide and nitrogen. The a-Si layer produced by this method is photoconductive in the region where an optical band gap is 2.0eV or higher. With this constitution, a sensitivity in a short wavelength region can be increased. |
