| 摘要 |
PURPOSE:To form a uniform film over a wide range of area by a method wherein a movable reacting mirror is provided in the reaction chamber of a photoinduction reacting device, the reacting mirror is shifted and a laser light is scanned on the whole area of the upper part of a wafer. CONSTITUTION:A movable reacting mirror 3 is provided inside the reaction chamber 2 wherein a thin film is formed or an etching is performed. The laser light 4 oscillated by a laser oscillator 1 is introduced into the reaction chamber 2 from a laser light incident part 5, and after the laser light 4 is reflected by the reflecting mirror 3 and passed through the upper part of a wafer, and it reaches the outlet port 6 of the laser light reflected by the mirror on the reverse side. Reaction gas is excited on the region whereon the laser light is projected, and a film is formed on the wafer. Also, an etching is performed on a substrate by selecting reaction gas. At this point, the reacting mirror 3 is moved to the direction same as the direction of incidence of the laser light using a driving system while the laser light is being projected, and the laser light 4 is scanned on the whole area of the upper part of the wafer. Thus, the reaction gas located at the upper part of the wafer is excited uniformly, and the photoinduction reaction is performed uniformly on the whole area of the wafer. |
