| 摘要 |
PURPOSE:To laminate interconnections in a multilayer through the interlayer insulating layer having a through hole by a method wherein a smooth resin film is formed on the semiconductor substrate by applying a high-molecular resin being included metal fine powder, the high- molecular resin is decomposed by irradiating an optical beam and an interconnection conductor layer is formed by melting the metal fine powder. CONSTITUTION:The ratio of metal fine powder of Au, Al, Si and so forth is decided so that the viscosity of a high-molecular resin becomes about 1,000cps after the metal fine powder is mixed into the high-molecular resin, is made to disperse and is included in the high- molecular resin and the high-molecular resin is prepared. Then, the prepared resin is applied on a semiconductor substrate 11, whereon the prescribed element is formed, using a spinner, a heat treatment is performed thereon to remove the solvent and a resin film 12 (high- molecular resin film 12 (high-molecular resin being included metal fine powder) is formed. Then, the high-molecular resin is decomposed, carbonized or gasified by irradiating an optical beam, and at the same time, a laser beam having enough energy to fuse the metal fine powder is selectively irradiated. After the irradiation, the non-irradiation part of the resin film is removed using organic solvent medium and an interconnection conductor layer (lower interconnection) 14 in the desired pattern is formed. An interlayer insulating film 15 consisting of an inorganic insulator is formed thereon and a through hole 16 is provided. |
