| 摘要 |
PCT No. PCT/DE82/00234 Sec. 371 Date Aug. 8, 1983 Sec. 102(e) Date Aug. 8, 1983 PCT Filed Dec. 30, 1982 PCT Pub. No. WO83/02528 PCT Pub. Date Jul. 21, 1983.A Darlington transistor circuit having a power transistor and a driver transistor is proposed. The two transistors are monolithically integrated in a common substrate (10) by a planar process, the substrate forming the collector zones of the two transistors. On the main surface of the substrate (10) there is a passivation layer (13) covering this main surface with the exception of contact windows. The base-collector junctions of the two transistors are protected by a metal electrode (15), which is located above the passivation layer (13) and extends up to a stop ring (14), which is disposed beneath the passivation layer (13) in the substrate (10). The potential at the cover electrode (15) is adjustable with the aid of a voltage divider (16). (FIG. 3). |
