| 摘要 |
An integrated memory system includes a microcomputer which, at defined intervals and by employing a classifying circuit integrated in an EEPROM, checks the memory cells of the EEPROM with respect to variations of the threshold values. Upon detection of a fault in a row or column which has thus been recognized as being faulty, this faulty row or column whose address is then stored in one EEPROM area, is replaced by a redundant row or column in another area by making use of a correction register. |
