| 摘要 |
PURPOSE:To enable to form an interlayer insulating film at low temperature as well as to prevent the deterioration of characteristics of an element by a method wherein an SiO film on which granular SiO is vacuum-deposited is used as the interlayer insulating film for the multilayer wiring of a GaAs integrated circuit. CONSTITUTION:N type active layers 21 and 22 are selectively formed on a semiinsulating GaAs substrate 1, and ohmic electrodes 31-34 are formed using a laminated vapor-deposition film. Then, gate electrodes 41 and 42, and the first layer wirings 51-53 are formed. This substrate is placed in a vacuum evaporator, granule-like SiO of 5-15 meshes is evaporated by performing a resistance heating method, and an SiO film 6 is formed. A through hole is formed on the SiO film 6, and the second layer wirings 71 and 72 are formed. The substrate is heated up to 100 deg.C or thereabout, and the characteristics of each layer can be maintained excellently. |
