| 摘要 |
PURPOSE:To accelerate the operational speed of an FET circuit by a method wherein an impurity doped ohmic electrode with low resistance and excellent transmittivity is formed on a gate insulating film to make a gate electrode and a source.drain electrode perform self-alignment. CONSTITUTION:A gate electrode 12, a CVD SiO2 12 as a transparent gate insulating film, a transparent conductive film 14a and a microcrystalline amorphous silicon film 14b are laminated on a transparent glass substrate 11 to be coated with a negative type resist 15. Then an amorphous silicon film 16 is deposited and a wiring part out of element region of source.drain is formed into specified pattern to complete an FET. Through these procedures, the operational speed of FET circuit may be accelerated at the least parasitic capacity between electrodes because the resist of microcrystalline film 14b at -1,000Angstrom may be sensitized with sharp contrast within the exposure time of around -10min and the source.drain electrodes may be formed precisely eliminating any overlap. |
