| 摘要 |
PURPOSE:To enable to bring the shape of etching cross-section of an insulating film into an arbitrarily and easily controllable state using a cylindrical plasma etching device by a method wherein the amount of side etching given to the film to be etched is controlled by the partial voltage ratio of the inert gas for reaction gas. CONSTITUTION:When a microscopic work is going to be performed on the insulating film consisting of a poly silicon film, a silicon nitride film, a silicon nitride film and the like using a cylindrical plasma etching device, the partial voltage ratio of dilute gas with Freon gas is brought to 1 or above by performing an etching wherein dilute gas is mixed to Freon gas, for example, if said insulating film is to be formed in the vertical cross-sectional form same as the size of photoresist coated on the insulating film. Also, when an inclination is given to the cross-sectional form of the insulating film for the purpose of preventing generation of an unsatisfactory step coverage, a plasma etching is performed in the state wherein the partial voltage ratio is brought to 1 or below. Through the above-mentioned procedures, the cross-sectional form after etching performed on the insulating film can be determined arbitrarily. |
