| 摘要 |
<p>PURPOSE:To heat and apply gelatin more stably by heating a rotary support table where a solid-state image pickup element is mounted at 30-40 deg.C previously, and dripping and coating the temperature-controlled gelatin over rotation. CONSTITUTION:A gelatin solution is put in a resist tank and controlled in a thermostatic water tank to about 40 deg.. On the other hand, while a semiconductor wafer where the solid-state image pickup element is formed is placed on the rotary support table 1, the support table 1 is heated for about one minute by a heater 3 under the support table 1 up to about 30 deg.C. Then, the gelatin solution in the resist tank 5 which is heated to about 40 deg.C is dripped from a nozzle 6 on the surface of the wafer 2 on the support table 1 which is heated to about 30 deg.C and the support table 1 is rotated at about 3,000rpm. Therefore, the gelatin solution when dripped on the wafer 2 does not have a large difference in temperature and is applied by rotation to uniform film thickness while maintaining optimum viscosity of about 10cp.</p> |
