发明名称 DISPOSITIVO A SEMICONDUTTORE E PROCEDIMENTO PER LA SUA FABBRICAZIONE
摘要 <p>A semiconductor device in which a silicon pellet is mounted on a ceramic substrate by means of a glass material of low melting point. To prevent the silicon pellet from being destroyed under thermal stress, the pellet is bonded to the glass material of low melting point through interposition of an adhesion reinforcing film such as an aluminium film capable of exhibiting a good wettability and a great bonding strength.</p>
申请公布号 IT1144882(B) 申请公布日期 1986.10.29
申请号 IT19810068266 申请日期 1981.09.30
申请人 HITACHI LTD 发明人 YAMAMOTO HIDEHARU;TSUNENO HIROSHI
分类号 H01L23/12;H01L21/52;H01L21/58;H01L23/13;(IPC1-7):H01L/ 主分类号 H01L23/12
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