发明名称 METHOD FOR CVD TREATMENT
摘要 PURPOSE:To increase the durability of a reactor and to carry out stable CVD for a long period by previously sticking inorg. powder to the inside of the reactor. CONSTITUTION:A gaseous mixture of silicon tetrachloride with propane and hydrogen is introduced into a reactor 1, and fine powder is deposited on the inner wall of the reactor 1 by CVD to form a layer 7 of inorg. powder. A substrate 3 is then put in the reactor 1, conditions during CVD are selected, and a prescribed gas for CVD is introduced into the reactor 1 to form a film on the substrate 3. A dispersion of inorg. powder may be sprayed or applied and dried to form the layer 7 of inorg. powder. A deposit produced by CVD sticks hardly on the layer 7 of inorg. powder, and even when the deposit sticks, it can be easily stripped.
申请公布号 JPS61243176(A) 申请公布日期 1986.10.29
申请号 JP19850083123 申请日期 1985.04.18
申请人 MITSUI ENG & SHIPBUILD CO LTD 发明人 KAYANE MIHARU;FUJITA FUSAO;MATSUMOTO KAZUHISA;YOKOYAMA KOJI
分类号 C23C16/44;B01J12/02;C23C16/00 主分类号 C23C16/44
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