| 摘要 |
PURPOSE:To effect the molecular beam growth of crystal in high efficiency, without causing remarkable imbalance in the deposition coefficient between nonmetallic elements, by growing mixed crystal of compound semiconductor using a compound of two or more kinds of nonmetallic elements as the molecular beam source. CONSTITUTION:The ultra-high vacuum vessel 1 contains molecular beam cells 3, 4, 5 directing the openings toward the substrate 2, and the cells are charged with Ga 6, AsP3 compound 7 and As 8, respectively, and heated to proper temperature with heaters 9. A single crystal of GaAs1-xPx (x is 0.5) having desired composition can be grown on the substrate 2 by properly setting the temperature of the molecular beam cells 3, 4, 5 emitting molecular beams of Ga, AsP3 and As, respectively.
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