| 摘要 |
PURPOSE:In the process for formation of a silicon carbide single crystal on a silicon base by a vapor-phase method, a trace amount of boron is added to single crystal as a stress-relaxation agent to the production of enable a silicon carbide single crystal base of a large area free from warpage and crack without any adverse effect on the crystallinity and surface smoothness. CONSTITUTION:In a reactor tube, a silicon single crystal base 14 is placed on the bed 2 and heated up to 900-1,200 deg.C by applying high-frequency current to work coil 4. SiH4 and propane as feed gased and H2 gas as a carrier are introduced in the reactor 1 to form an extremely thin film of silicon carbide on the base 14. Then, the feed gases are stopped and the base 14 is heated up to 1,300-1,400 deg.C with work coil 8. At this state, SiH4, propane and boron gas are introduced using H2 gas as a carrier into the reactor 1 to effect the growth of a silicon carbide film on the extremely thin silicon carbide film coating the silicon base 14.
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