发明名称 ION IMPLANTING APPARATUS
摘要 PURPOSE:To entirely automate the process requiring manpower by providing a central processing unit for driving respective control section on the basis of preset schedule to implant ions into a semiconductor wafer in one implantation chamber then driving to implant ions into another semiconductor wafer in the other implantation chamber. CONSTITUTION:It is provided with a wafer operation control section 1 electrically connected with wafer operating section 15 to control/operate the wafer operating section 15 on the basis of a command from CPU 4 while to feed back the informations to CPU 4. CPU 4 is previously stored with the entire process schedule to connect respectively with wafer operation control section 1, vacuum detection control section 2, bulb control section 3 and circuit control section 4 on the basis of the memories to collect informations while to transmit commands thus to achieve memory process. The degree of vacuum is confirmed by an oscillation circuit having the ion current of ionization vacuum gauge as the limit level thus to confirm the completion of the adjusting of beam and to transmit the transit signal to ion implantation through vacuum detection control section 2 in circuit control section 4.
申请公布号 JPS61243651(A) 申请公布日期 1986.10.29
申请号 JP19850082253 申请日期 1985.04.19
申请人 TOSHIBA CORP 发明人 MURAKAMI KEIZO
分类号 H01J37/317;H01L21/265 主分类号 H01J37/317
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